Publication:
Arsenic junction thermal stability and high-dose boron-pocket activation during SPER in nMOS transistors
Date
dc.contributor.author | Severi, Simone | |
dc.contributor.author | Pawlak, Bartek | |
dc.contributor.author | Duffy, Ray | |
dc.contributor.author | Augendre, Emmanuel | |
dc.contributor.author | Henson, Kirklen | |
dc.contributor.author | Lindsay, Richard | |
dc.contributor.author | De Meyer, Kristin | |
dc.contributor.imecauthor | Severi, Simone | |
dc.contributor.imecauthor | Pawlak, Bartek | |
dc.contributor.imecauthor | De Meyer, Kristin | |
dc.date.accessioned | 2021-10-16T19:36:51Z | |
dc.date.available | 2021-10-16T19:36:51Z | |
dc.date.issued | 2007 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/12880 | |
dc.source.beginpage | 198 | |
dc.source.endpage | 200 | |
dc.source.issue | 3 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.volume | 28 | |
dc.title | Arsenic junction thermal stability and high-dose boron-pocket activation during SPER in nMOS transistors | |
dc.type | Journal article | |
dspace.entity.type | Publication | |
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