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Dry etching of Mo based layers and its interdependence with a poly-Si/MoOxNy/TiN/HfO2 gate stack

Date

2013
Journal article
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dc.contributor.authorParaschiv, Vasile
dc.contributor.authorBoullart, Werner
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.accessioned2021-10-21T10:44:57Z
dc.date.available2021-10-21T10:44:57Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22906
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931712005874
dc.source.beginpage60
dc.source.endpage64
dc.source.journalMicroelectronic Engineering
dc.source.volume105
dc.title

Dry etching of Mo based layers and its interdependence with a poly-Si/MoOxNy/TiN/HfO2 gate stack

dc.typeJournal article
dspace.entity.typePublication
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