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Comparison of sub 1 nm TiN/HfO2 with Poly-Si/HfO2 gate stacks u sing scaled chemical oxide interfaces

Date

2003
Proceedings Paper
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dc.contributor.authorTsai, Wilman
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorChen, P.J.
dc.contributor.authorOnsia, Bart
dc.contributor.authorCarter, Richard
dc.contributor.authorCartier, Eduard
dc.contributor.authorYoung, Edward
dc.contributor.authorGreen, Martin
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorOnsia, Bart
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-15T07:02:18Z
dc.date.available2021-10-15T07:02:18Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8229
dc.source.beginpage21
dc.source.conferenceSymposium on VLSI Technology. Digest of Technical Papers
dc.source.conferencedate10/06/2003
dc.source.conferencelocationKyoto Japan
dc.source.endpage22
dc.title

Comparison of sub 1 nm TiN/HfO2 with Poly-Si/HfO2 gate stacks u sing scaled chemical oxide interfaces

dc.typeProceedings paper
dspace.entity.typePublication
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