Publication:

Internal photoemission at interfaces of ALD TaiOx insulating layers deposited on Si, InP and In0.53Ga0.47As

Date

2012
Proceedings Paper
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dc.contributor.authorChou, H.-Y.
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorThoan, N.H.
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorLin, Dennis
dc.contributor.authorHoussa, Michel
dc.contributor.authorStesmans, Andre
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.accessioned2021-10-20T10:17:41Z
dc.date.available2021-10-20T10:17:41Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20461
dc.identifier.urlhttp://iopscience.iop.org/1757-899X/41/1/012019
dc.source.beginpage12019
dc.source.conferenceE-MRS Spring Meeting Symposium M: More than Moore: Novel Materials Approaches for Functionalized Silicon Based Microelectronics
dc.source.conferencedate14/05/2012
dc.source.conferencelocationStrasbourg France
dc.title

Internal photoemission at interfaces of ALD TaiOx insulating layers deposited on Si, InP and In0.53Ga0.47As

dc.typeProceedings paper
dspace.entity.typePublication
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