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Temperature impact on the Lorentzian noise induced by electron valence-band tunneling in partially depleted SOI p-MOSFETs
Publication:
Temperature impact on the Lorentzian noise induced by electron valence-band tunneling in partially depleted SOI p-MOSFETs
Date
2007
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Guo, W.
;
Cretu, B.
;
Routoure, J.M.
;
Carin, R.
;
Simoen, Eddy
;
Claeys, Cor
Journal
Solid-State Electronics
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1915
since deposited on 2021-10-16
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Acq. date: 2025-12-09
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Views
1915
since deposited on 2021-10-16
4
last month
Acq. date: 2025-12-09
Citations