Publication:
Temperature impact on the Lorentzian noise induced by electron valence-band tunneling in partially depleted SOI p-MOSFETs
Date
| dc.contributor.author | Guo, W. | |
| dc.contributor.author | Cretu, B. | |
| dc.contributor.author | Routoure, J.M. | |
| dc.contributor.author | Carin, R. | |
| dc.contributor.author | Simoen, Eddy | |
| dc.contributor.author | Claeys, Cor | |
| dc.contributor.imecauthor | Simoen, Eddy | |
| dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
| dc.date.accessioned | 2021-10-16T16:26:20Z | |
| dc.date.available | 2021-10-16T16:26:20Z | |
| dc.date.issued | 2007 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/12239 | |
| dc.source.beginpage | 1180 | |
| dc.source.endpage | 1184 | |
| dc.source.issue | 9 | |
| dc.source.journal | Solid-State Electronics | |
| dc.source.volume | 51 | |
| dc.title | Temperature impact on the Lorentzian noise induced by electron valence-band tunneling in partially depleted SOI p-MOSFETs | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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