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Precise optical constants: determination and impact on metrology, simulation and development of EUV masks

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dc.contributor.authorSaadeh, Qais
dc.contributor.authorMesilhy, Hazem
dc.contributor.authorSoltwisch, Victor
dc.contributor.authorErdmann, Andreas
dc.contributor.authorCiesielski, Richard
dc.contributor.authorLohr, Leonhard
dc.contributor.authorAndrle, Anna
dc.contributor.authorPhilipsen, Vicky
dc.contributor.authorThakare, Devesh
dc.contributor.authorLaubis, Christian
dc.contributor.authorScholze, Frank
dc.contributor.authorKolbe, Michael
dc.contributor.imecauthorPhilipsen, Vicky
dc.contributor.imecauthorThakare, Devesh
dc.contributor.orcidimecPhilipsen, Vicky::0000-0002-2959-432X
dc.contributor.orcidimecThakare, Devesh::0000-0003-3265-7042
dc.date.accessioned2023-06-08T09:45:33Z
dc.date.available2023-02-15T03:23:36Z
dc.date.available2023-02-16T08:05:56Z
dc.date.available2023-06-08T09:45:33Z
dc.date.issued2022
dc.description.wosFundingTextThis project has received funding from the Electronic Component Systems for European Leadership Joint Undertaking under grant agreement No 783247 -Technology Advances for Pilot line of Enhanced Semiconductors for 3 nm (TAPES3) and from the EMPIR Metrology for Industry project under grant No 20IND04 -Traceable metrology of soft X-ray to IR optical constants and nanofilms for advanced manufacturing (ATMOC). This Joint Undertaking receives support from the European Union's Horizon 2020 research and innovation program alongside Netherlands, Belgium, Germany, France, Austria, United Kingdom, Israel, and Switzerland.
dc.identifier.doi10.1117/12.2643246
dc.identifier.eisbn978-1-5106-5642-0
dc.identifier.issn0277-786X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41098
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING
dc.source.beginpageArt. 122930Y
dc.source.conferencePhotomask Technology Conference
dc.source.conferencedateSEP 26-29, 2022
dc.source.conferencelocationMonterey
dc.source.journalProceedings of SPIE
dc.source.numberofpages12
dc.source.volume12293
dc.subject.keywordsEXTREME-ULTRAVIOLET
dc.subject.keywordsREFRACTIVE-INDEX
dc.subject.keywordsDIFFRACTION
dc.subject.keywordsREFLECTION
dc.subject.keywordsSCATTERING
dc.subject.keywordsphotomask
dc.subject.keywordsMask 3D effects
dc.subject.keywordsEUV lithography, high NA, computational lithography, EUV masks, EUV absorber materials
dc.title

Precise optical constants: determination and impact on metrology, simulation and development of EUV masks

dc.typeProceedings paper
dspace.entity.typePublication
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