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Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects
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Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects
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Date
2008
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mukhopadhyay, Bratati
;
Biswas, Abhijit
;
Basu, P.K.
;
Eneman, Geert
;
Verheyen, Peter
;
Simoen, Eddy
;
Claeys, Cor
Journal
Semiconductor Science and Technology
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1866
since deposited on 2021-10-17
2
last month
Acq. date: 2025-12-15
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Metrics
Views
1866
since deposited on 2021-10-17
2
last month
Acq. date: 2025-12-15
Citations