Publication:
Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects
Date
| dc.contributor.author | Mukhopadhyay, Bratati | |
| dc.contributor.author | Biswas, Abhijit | |
| dc.contributor.author | Basu, P.K. | |
| dc.contributor.author | Eneman, Geert | |
| dc.contributor.author | Verheyen, Peter | |
| dc.contributor.author | Simoen, Eddy | |
| dc.contributor.author | Claeys, Cor | |
| dc.contributor.imecauthor | Eneman, Geert | |
| dc.contributor.imecauthor | Verheyen, Peter | |
| dc.contributor.imecauthor | Simoen, Eddy | |
| dc.contributor.orcidimec | Eneman, Geert::0000-0002-5849-3384 | |
| dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
| dc.date.accessioned | 2021-10-17T09:11:18Z | |
| dc.date.available | 2021-10-17T09:11:18Z | |
| dc.date.issued | 2008 | |
| dc.identifier.issn | 0268-1242 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/14195 | |
| dc.source.beginpage | 59017 | |
| dc.source.issue | 9 | |
| dc.source.journal | Semiconductor Science and Technology | |
| dc.source.volume | 23 | |
| dc.title | Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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