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Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 90 K
Publication:
Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 90 K
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Date
2005
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Pavanello, M.A.
;
Martino, J.A.
;
Simoen, Eddy
;
Claeys, Cor
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1840
since deposited on 2021-10-16
Acq. date: 2025-12-16
Citations
Metrics
Views
1840
since deposited on 2021-10-16
Acq. date: 2025-12-16
Citations