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Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 90 K

Date

2005
Proceedings Paper
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dc.contributor.authorPavanello, M.A.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-16T04:00:17Z
dc.date.available2021-10-16T04:00:17Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11003
dc.source.beginpage464
dc.source.conferenceProceedings SBMicro: 20th Symposium on Microelectronics Technology and Devices
dc.source.conferencedate5/09/2005
dc.source.conferencelocationFlorianopolis Brazil
dc.source.endpage474
dc.title

Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 90 K

dc.typeProceedings paper
dspace.entity.typePublication
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