Publication:

Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

Date

2020

Journal article

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Author(s)

;

Mukherjee, Kalparupa

;

De Santi, Carlo

;

Stoffels, Steve

;

;

;

Bakeroot, Benoit

;

Decoutere, Stefaan

;

Meneghesso, Gaudenzio

;

;

Meneghini, Matteo

Journal

Applied Physics Express

Statistics

1950 since deposited on 2021-10-28

Acq. date: 2026-02-26