Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices

dc.contributor.author	Borga, Matteo
dc.contributor.author	Mukherjee, Kalparupa
dc.contributor.author	De Santi, Carlo
dc.contributor.author	Stoffels, Steve
dc.contributor.author	Geens, Karen
dc.contributor.author	You, Shuzhen
dc.contributor.author	Bakeroot, Benoit
dc.contributor.author	Decoutere, Stefaan
dc.contributor.author	Meneghesso, Gaudenzio
dc.contributor.author	Zanoni, Enrico
dc.contributor.author	Meneghini, Matteo
dc.contributor.imecauthor	Borga, Matteo
dc.contributor.imecauthor	Stoffels, Steve
dc.contributor.imecauthor	Geens, Karen
dc.contributor.imecauthor	You, Shuzhen
dc.contributor.imecauthor	Bakeroot, Benoit
dc.contributor.imecauthor	Decoutere, Stefaan
dc.contributor.orcidimec	Borga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimec	Geens, Karen::0000-0003-1815-3972
dc.contributor.orcidimec	Bakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimec	Decoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned	2021-10-28T20:27:30Z
dc.date.available	2021-10-28T20:27:30Z
dc.date.issued	2020
dc.identifier.issn	1882-0778
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/34809
dc.identifier.url	https://iopscience.iop.org/article/10.35848/1882-0786/ab6ef8
dc.source.beginpage	24006
dc.source.issue	2
dc.source.journal	Applied Physics Express
dc.source.volume	13
dc.title	Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
dc.type	Journal article
dspace.entity.type	Publication
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