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Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications

 
dc.contributor.authorLee, Kookjin
dc.contributor.authorJi, Hyunjin
dc.contributor.authorKim, Yanghee
dc.contributor.authorKaczer, Ben
dc.contributor.authorLee, Hyebin
dc.contributor.authorAhn, Jae-Pyoung
dc.contributor.authorChoi, Junhee
dc.contributor.authorGrill, Alexander
dc.contributor.authorPanarella, Luca
dc.contributor.authorSmets, Quentin
dc.contributor.authorVerreck, Devin
dc.contributor.authorVan Beek, Simon
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorLinten, Dimitri
dc.contributor.authorNa, Junhong
dc.contributor.authorLee, Jae Woo
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorKim, Gyu-Tae
dc.contributor.imecauthorLee, Kookjin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGrill, Alexander
dc.contributor.imecauthorPanarella, Luca
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorVan Beek, Simon
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.orcidextAhn, Jae-Pyoung::0000-0003-2657-7425
dc.contributor.orcidextLee, Jae Woo::0000-0002-4376-476X
dc.contributor.orcidimecLee, Kookjin::0000-0002-9896-1090
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecGrill, Alexander::0000-0003-1615-1033
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecChasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecVan Beek, Simon::0000-0002-2499-4172
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.date.accessioned2023-08-21T09:29:59Z
dc.date.available2023-06-20T10:35:58Z
dc.date.available2023-08-21T09:29:59Z
dc.date.issued2022
dc.description.wosFundingTextThis research was supported by Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (2017M3A7B4049119, Gyu-Tae Kim). H.J. also wishes to acknowledge the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2019R1A2C1010742). Further, J.W.L. also wishes to acknowledge the National Research Foundation of Korea (NRF) grant funded by the KOREA government (MSIT) (2019R1F1A1060687).
dc.identifier.doi10.1002/admi.202102488
dc.identifier.issn2196-7350
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41925
dc.publisherWILEY
dc.source.beginpageArt. 2102488
dc.source.endpagena
dc.source.issue9
dc.source.journalADVANCED MATERIALS INTERFACES
dc.source.numberofpages8
dc.source.volume9
dc.subject.keywordsTRANSPORT-PROPERTIES
dc.subject.keywordsLARGE-AREA
dc.subject.keywordsMOS2
dc.subject.keywordsMONO
dc.subject.keywordsDEFECTS
dc.title

Deep Understanding of Electron Beam Effects on 2D Layered Semiconducting Devices Under Bias Applications

dc.typeJournal article
dspace.entity.typePublication
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