Steady state oxygen surface content in oxygen sputtered silicon at impact energy of 5 Kev per atom

dc.contributor.author	Serrano, J. J.
dc.contributor.author	Blanco, J. M.
dc.contributor.author	Guzman, B.
dc.contributor.author	De Witte, Hilde
dc.contributor.author	Vandervorst, Wilfried
dc.contributor.imecauthor	Vandervorst, Wilfried
dc.date.accessioned	2021-10-14T17:48:17Z
dc.date.available	2021-10-14T17:48:17Z
dc.date.issued	2001
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/5647
dc.source.beginpage	4456
dc.source.endpage	4466
dc.source.issue	9
dc.source.journal	Journal of Applied Physics
dc.source.volume	90
dc.title	Steady state oxygen surface content in oxygen sputtered silicon at impact energy of 5 Kev per atom
dc.type	Journal article
dspace.entity.type	Publication
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