Publication:
Comparison of SiO2 and HfO2/SiO2 gate stacks electrical behaviour at a nanometre scale
Date
| dc.contributor.author | Blasco, Xavier | |
| dc.contributor.author | Nafria, M. | |
| dc.contributor.author | Aymerich, X. | |
| dc.contributor.author | Vandervorst, Wilfried | |
| dc.contributor.imecauthor | Vandervorst, Wilfried | |
| dc.date.accessioned | 2021-10-16T00:47:00Z | |
| dc.date.available | 2021-10-16T00:47:00Z | |
| dc.date.issued | 2005 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/10110 | |
| dc.source.beginpage | 719 | |
| dc.source.endpage | 721 | |
| dc.source.issue | 12 | |
| dc.source.journal | Electronics Letters | |
| dc.source.volume | 41 | |
| dc.title | Comparison of SiO2 and HfO2/SiO2 gate stacks electrical behaviour at a nanometre scale | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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