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Radiation effects in advanced multiple-gate and silicon-on-insulator transistors

Date

2013
Journal article
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorGaillardin, Marc
dc.contributor.authorPaillet, Philippe
dc.contributor.authorReed, Robert
dc.contributor.authorSchrimpf, Ron
dc.contributor.authorAlles, Michael
dc.contributor.authorEl-Mamouni, Farah
dc.contributor.authorFleetwood, Daniel
dc.contributor.authorGriffoni, Alessio
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-21T12:05:53Z
dc.date.available2021-10-21T12:05:53Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23087
dc.source.beginpage1970
dc.source.endpage1991
dc.source.issue3
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.volume60
dc.title

Radiation effects in advanced multiple-gate and silicon-on-insulator transistors

dc.typeJournal article
dspace.entity.typePublication
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