Publication:

Low temperature spike anneal for Ni-Silicide formation

Date

2004-11
Journal article
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dc.contributor.authorLauwers, Anne
dc.contributor.authorKittl, Jorge
dc.contributor.authorVan Dal, Mark
dc.contributor.authorChamirian, Oxana
dc.contributor.authorLindsay, Richard
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorDemeurisse, Caroline
dc.contributor.authorVrancken, Christa
dc.contributor.authorMaex, Karen
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorDemeurisse, Caroline
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorMaex, Karen
dc.date.accessioned2021-10-15T14:23:18Z
dc.date.available2021-10-15T14:23:18Z
dc.date.embargo9999-12-31
dc.date.issued2004-11
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9183
dc.source.beginpage303
dc.source.endpage310
dc.source.issue1_4
dc.source.journalMicroelectronic Engineering
dc.source.volume76
dc.title

Low temperature spike anneal for Ni-Silicide formation

dc.typeJournal article
dspace.entity.typePublication
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