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Conference contributions
RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs
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RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs
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Date
2014
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Franco, Jacopo
;
Kaczer, Ben
;
Waldron, Niamh
;
Roussel, Philippe
;
Alian, AliReza
;
Pourghaderi, Mohammad Ali
;
Ji, Zhigang
;
Grasser, Tibor
;
Kauerauf, Thomas
;
Sioncke, Sonja
;
Collaert, Nadine
;
Thean, Aaron
;
Groeseneken, Guido
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1893
since deposited on 2021-10-22
Acq. date: 2025-12-09
Citations
Metrics
Views
1893
since deposited on 2021-10-22
Acq. date: 2025-12-09
Citations