Publication:

RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs

Date

2014
Proceedings Paper
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dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorWaldron, Niamh
dc.contributor.authorRoussel, Philippe
dc.contributor.authorAlian, AliReza
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorJi, Zhigang
dc.contributor.authorGrasser, Tibor
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorSioncke, Sonja
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T01:32:11Z
dc.date.available2021-10-22T01:32:11Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23832
dc.source.beginpage506
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate15/12/2014
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage509
dc.title

RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs

dc.typeProceedings paper
dspace.entity.typePublication
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