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A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G(max) Gain Boosting Technique
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A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G(max) Gain Boosting Technique
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Date
2020
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Park, Dae-Woong
;
Utomo, Dzuhri Radityo
;
Hong, Jong-Phil
;
Vaesen, Kristof
;
Wambacq, Piet
;
Lee, Sang-Gug
Journal
na
Abstract
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1905
since deposited on 2021-11-02
1
last month
Acq. date: 2026-01-06
Citations
Metrics
Views
1905
since deposited on 2021-11-02
1
last month
Acq. date: 2026-01-06
Citations