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A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G(max) Gain Boosting Technique

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dc.contributor.authorPark, Dae-Woong
dc.contributor.authorUtomo, Dzuhri Radityo
dc.contributor.authorHong, Jong-Phil
dc.contributor.authorVaesen, Kristof
dc.contributor.authorWambacq, Piet
dc.contributor.authorLee, Sang-Gug
dc.contributor.imecauthorPark, Dae-Woong
dc.contributor.imecauthorVaesen, Kristof
dc.contributor.imecauthorWambacq, Piet
dc.contributor.orcidimecPark, Dae-Woong::0000-0003-2755-3935
dc.contributor.orcidimecVaesen, Kristof::0000-0001-9971-3593
dc.contributor.orcidimecWambacq, Piet::0000-0003-4388-7257
dc.date.accessioned2022-01-03T11:35:52Z
dc.date.available2021-11-02T16:04:21Z
dc.date.available2022-01-03T11:35:52Z
dc.date.issued2020
dc.identifier.eisbn978-1-7281-9942-9
dc.identifier.issnna
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38133
dc.publisherIEEE
dc.source.conferenceIEEE Symposium on VLSI Circuits
dc.source.conferencedateJUN 16-19, 2020
dc.source.conferencelocationHonolulu, HI, USA
dc.source.journalna
dc.source.numberofpages2
dc.subject.keywords65-NM CMOS
dc.title

A 247 and 272 GHz Two-Stage Regenerative Amplifiers in 65 nm CMOS with 18 and 15 dB Gain Based on Double-G(max) Gain Boosting Technique

dc.typeProceedings paper
dspace.entity.typePublication
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