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Two-pulse C-V: a new method for characterization electron traps in the bulk of SiO2/high-k dielectric stacks
Publication:
Two-pulse C-V: a new method for characterization electron traps in the bulk of SiO2/high-k dielectric stacks
Date
2008
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zhang, W.D.
;
Govoreanu, Bogdan
;
Zheng, X.F.
;
Ruiz Aguado, Daniel
;
Rosmeulen, Maarten
;
Blomme, Pieter
;
Zhang, J.F.
;
Van Houdt, Jan
Journal
IEEE Electron Device Letters
Abstract
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1976
since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations
Metrics
Views
1976
since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations