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Two-pulse C-V: a new method for characterization electron traps in the bulk of SiO2/high-k dielectric stacks

Date

2008
Journal article
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dc.contributor.authorZhang, W.D.
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorZheng, X.F.
dc.contributor.authorRuiz Aguado, Daniel
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorBlomme, Pieter
dc.contributor.authorZhang, J.F.
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-17T13:07:13Z
dc.date.available2021-10-17T13:07:13Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14834
dc.source.beginpage1043
dc.source.endpage1046
dc.source.issue9
dc.source.journalIEEE Electron Device Letters
dc.source.volume29
dc.title

Two-pulse C-V: a new method for characterization electron traps in the bulk of SiO2/high-k dielectric stacks

dc.typeJournal article
dspace.entity.typePublication
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