Publication:

Scalability of RuTiN barriers deposited by plasma-enhanced atomic layer deposition for advanced interconnects

Date

2014
Journal article
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dc.contributor.authorSwerts, Johan
dc.contributor.authorSiew, Yong Kong
dc.contributor.authorVan Besien, Els
dc.contributor.authorBarbarin, Yohan
dc.contributor.authorOpsomer, Karl
dc.contributor.authorBoemmels, Juergen
dc.contributor.authorTokei, Zsolt
dc.contributor.authorVan Elshocht, Sven
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorSiew, Yong Kong
dc.contributor.imecauthorVan Besien, Els
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorBoemmels, Juergen
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.orcidimecVan Besien, Els::0000-0002-5174-2229
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-22T06:17:35Z
dc.date.available2021-10-22T06:17:35Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24581
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0167931713005911
dc.source.beginpage235
dc.source.endpage239
dc.source.journalMicroelectronic Engineering
dc.source.volume120
dc.title

Scalability of RuTiN barriers deposited by plasma-enhanced atomic layer deposition for advanced interconnects

dc.typeJournal article
dspace.entity.typePublication
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