Publication:

Cumulated charging mechanisms at gate processing in high-kappa first planar NMOS devices

Date

2020
Proceedings Paper
https://doi.org/10.1109/IIRW49815.2020.9312853
Simple item page Full metadata Statistics
 
dc.contributor.authorHiblot, Gaspard
dc.contributor.authorParihar, Narendra
dc.contributor.authorDupuy, Emmanuel
dc.contributor.authorMannaert, Geert
dc.contributor.authorBaudot, Sylvain
dc.contributor.authorKaczer, Ben
dc.contributor.authorDe Heyn, Vincent
dc.contributor.authorMercha, Abdelkarim
dc.contributor.imecauthorHiblot, Gaspard
dc.contributor.imecauthorParihar, Narendra
dc.contributor.imecauthorDupuy, Emmanuel
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorBaudot, Sylvain
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDe Heyn, Vincent
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecHiblot, Gaspard::0000-0002-3869-965X
dc.contributor.orcidimecDupuy, Emmanuel::0000-0003-3341-1618
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.date.accessioned2022-01-07T10:09:58Z
dc.date.available2021-11-02T16:00:57Z
dc.date.available2022-01-07T10:09:58Z
dc.date.issued2020
dc.identifier.doi10.1109/IIRW49815.2020.9312853
dc.identifier.eisbn978-1-7281-7058-9
dc.identifier.issn1930-8841
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37865
dc.publisherIEEE
dc.source.beginpage54
dc.source.conferenceIEEE International Integrated Reliability Workshop (IIRW)
dc.source.conferencedateOCT 04-NOV 01, 2020
dc.source.conferencelocationVirtual
dc.source.endpage57
dc.source.journalna
dc.source.numberofpages4
dc.subject.keywordsPLASMA-INDUCED DAMAGE
dc.subject.keywordsOXIDE DAMAGE
dc.title

Cumulated charging mechanisms at gate processing in high-kappa first planar NMOS devices

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions