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APT analysis of short (~200 nm) Si nanowires embedded in SiO2 and HfO2

Date

2016
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dc.contributor.authorMelkonyan, Davit
dc.contributor.authorFleischmann, Claudia
dc.contributor.authorVeloso, Anabela
dc.contributor.authorArnoldi, Laurent
dc.contributor.authorKumar, Arul
dc.contributor.authorBogdanowicz, Janusz
dc.contributor.authorVurpillot, Francois
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorFleischmann, Claudia
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorBogdanowicz, Janusz
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecFleischmann, Claudia::0000-0003-1531-6916
dc.contributor.orcidimecBogdanowicz, Janusz::0000-0002-7503-8922
dc.date.accessioned2021-10-23T12:43:05Z
dc.date.available2021-10-23T12:43:05Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26992
dc.source.conferenceAPT&M
dc.source.conferencedate12/06/2016
dc.source.conferencelocationGyeongju South Korea
dc.title

APT analysis of short (~200 nm) Si nanowires embedded in SiO2 and HfO2

dc.typeOral presentation
dspace.entity.typePublication
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