Publication:

Investigation of the electrical properties of Ge/high-k gate stack: GeO2 VS Si-cap

Date

2011
Meeting abstract
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dc.contributor.authorMitard, Jerome
dc.contributor.authorBellenger, Florence
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorVincent, Benjamin
dc.contributor.authorNyns, Laura
dc.contributor.authorMartens, Koen
dc.contributor.authorVrancken, Evi
dc.contributor.authorWang, Gang
dc.contributor.authorLin, Dennis
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHeyns, Marc
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorVrancken, Evi
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-19T16:23:49Z
dc.date.available2021-10-19T16:23:49Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19437
dc.source.conferenceInternational Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate28/09/2011
dc.source.conferencelocationNagoya Japan
dc.title

Investigation of the electrical properties of Ge/high-k gate stack: GeO2 VS Si-cap

dc.typeMeeting abstract
dspace.entity.typePublication
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