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μs-Range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate

Date

2019
Proceedings Paper
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dc.contributor.authorCanato, E.
dc.contributor.authorMasin, F.
dc.contributor.authorBorga, M.
dc.contributor.authorZanoni, E.
dc.contributor.authorMeneghini, M.
dc.contributor.authorMeneghesso, G.
dc.contributor.authorStockman, Arno
dc.contributor.authorBanerjee, A.
dc.contributor.authorMoens, P.
dc.contributor.imecauthorStockman, Arno
dc.date.accessioned2021-10-27T07:47:35Z
dc.date.available2021-10-27T07:47:35Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32631
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8720549
dc.source.conference2019 IEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedate31/03/2019
dc.source.conferencelocationMonterey, CA USA
dc.title

μs-Range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate

dc.typeProceedings paper
dspace.entity.typePublication
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