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Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams

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dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.contributor.authorDelabie, Annelies
dc.contributor.authorBellenger, Florence
dc.contributor.authorHoussa, Michel
dc.contributor.authorLieten, Ruben
dc.contributor.authorMerckling, Clement
dc.contributor.authorPenaud, Julien
dc.contributor.authorBrunco, David
dc.contributor.authorMeuris, Marc
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T06:13:26Z
dc.date.available2021-10-17T06:13:26Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.issn1369-8001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13290
dc.source.beginpage230
dc.source.endpage235
dc.source.issue5_6
dc.source.journalMaterials Science in Semiconductor Processing
dc.source.volume11
dc.title

Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams

dc.typeJournal article
dspace.entity.typePublication
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