Publication:

Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening

 
dc.contributor.authorShi, Yuanyuan
dc.contributor.authorGroven, Benjamin
dc.contributor.authorSmets, Quentin
dc.contributor.authorSutar, Surajit
dc.contributor.authorBanerjee, Sreetama
dc.contributor.authorMedina, Henry
dc.contributor.authorWu, Xiangyu
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorBrems, Steven
dc.contributor.authorLin, Dennis
dc.contributor.authorMorin, Pierre
dc.contributor.authorCaymax, Matty
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorRadu, Iuliana
dc.contributor.imecauthorShi, Yuanyuan
dc.contributor.imecauthorGroven, Benjamin
dc.contributor.imecauthorSmets, Quentin
dc.contributor.imecauthorSutar, Surajit
dc.contributor.imecauthorBanerjee, Sreetama
dc.contributor.imecauthorMedina, Henry
dc.contributor.imecauthorWu, Xiangyu
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorBrems, Steven
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorMorin, Pierre
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecShi, Yuanyuan::0000-0002-4836-6752
dc.contributor.orcidimecGroven, Benjamin::0000-0002-5781-7594
dc.contributor.orcidimecSmets, Quentin::0000-0002-2356-5915
dc.contributor.orcidimecSutar, Surajit::0000-0003-3114-718X
dc.contributor.orcidimecBanerjee, Sreetama::0000-0002-6297-9547
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecBrems, Steven::0000-0002-0282-8528
dc.contributor.orcidimecMorin, Pierre::0000-0002-4637-496X
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.date.accessioned2022-09-20T09:35:39Z
dc.date.available2022-07-09T02:27:23Z
dc.date.available2022-09-20T09:35:39Z
dc.date.issued2021
dc.identifier.doi10.1109/IEDM19574.2021.9720676
dc.identifier.eisbn978-1-6654-2572-8
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40078
dc.publisherIEEE
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 11-16, 2021
dc.source.conferencelocationSan Francisco
dc.source.journalna
dc.source.numberofpages4
dc.title

Superior electrostatic control in uniform monolayer MoS2 scaled transistors via in-situ surface smoothening

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections: