Publication:

Channel hot carrier degradation mechanism in long/short channel n-FinFETs

Date

2013
Journal article
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dc.contributor.authorCho, Moon Ju
dc.contributor.authorRoussel, Philippe
dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorFranco, Jacopo
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorChiarella, Thomas
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-21T06:58:52Z
dc.date.available2021-10-21T06:58:52Z
dc.date.issued2013
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22147
dc.source.beginpage4002
dc.source.endpage4007
dc.source.issue12
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume60
dc.title

Channel hot carrier degradation mechanism in long/short channel n-FinFETs

dc.typeJournal article
dspace.entity.typePublication
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