Publication:

Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs

Date

2011
Journal article
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorMitard, Jerome
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorEneman, Geert
dc.contributor.authorDobbie, A.
dc.contributor.authorMyronov, M.
dc.contributor.authorLeadley, D.R.
dc.contributor.authorMeuris, Marc
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-19T18:55:03Z
dc.date.available2021-10-19T18:55:03Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19792
dc.source.beginpage87
dc.source.endpage89
dc.source.issue1
dc.source.journalIEEE Electron Device Letters
dc.source.volume32
dc.title

Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs

dc.typeJournal article
dspace.entity.typePublication
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