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Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K

Date

2025-APR
Journal article
https://doi.org/10.1016/j.sse.2025.109068
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cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtualsource.departmentbd265d49-9bfb-424d-adea-35c86526f50d
cris.virtualsource.orcidbd265d49-9bfb-424d-adea-35c86526f50d
dc.contributor.authorTahiat, A.
dc.contributor.authorCretu, B.
dc.contributor.authorVeloso, Anabela
dc.contributor.authorSimoen, E.
dc.date.accessioned2025-03-07T21:02:40Z
dc.date.available2025-03-07T21:02:40Z
dc.date.issued2025-APR
dc.identifier.doi10.1016/j.sse.2025.109068
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45354
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpage109068
dc.source.issueApril
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages7
dc.source.volume225
dc.title

Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K

dc.typeJournal article
dspace.entity.typePublication
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