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Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p- channel MuGFETs
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Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p- channel MuGFETs
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Date
2010
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Rodrigues, M.
;
Martino, J.A.
;
Mercha, Abdelkarim
;
Collaert, Nadine
;
Simoen, Eddy
;
Claeys, Cor
Journal
Solid-State Electronics
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1894
since deposited on 2021-10-18
Acq. date: 2025-12-15
Citations
Metrics
Views
1894
since deposited on 2021-10-18
Acq. date: 2025-12-15
Citations