Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p- channel MuGFETs

dc.contributor.author	Rodrigues, M.
dc.contributor.author	Martino, J.A.
dc.contributor.author	Mercha, Abdelkarim
dc.contributor.author	Collaert, Nadine
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, Cor
dc.contributor.imecauthor	Mercha, Abdelkarim
dc.contributor.imecauthor	Collaert, Nadine
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Mercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimec	Collaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-18T20:52:13Z
dc.date.available	2021-10-18T20:52:13Z
dc.date.embargo	9999-12-31
dc.date.issued	2010
dc.identifier.issn	0038-1101
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/17888
dc.source.beginpage	1592
dc.source.endpage	1597
dc.source.issue	12
dc.source.journal	Solid-State Electronics
dc.source.volume	54
dc.title	Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p- channel MuGFETs
dc.type	Journal article
dspace.entity.type	Publication
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