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Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10(3)s retention, > 10(11) cycles endurance and L-g scalability down to 14nm
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Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10(3)s retention, > 10(11) cycles endurance and L-g scalability down to 14nm
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Date
2021
Proceedings Paper
https://doi.org/10.1109/IEDM19574.2021.9720596
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Belmonte, Attilio
;
Oh, Hyungrock
;
Subhechha, Subhali
;
Rassoul, Nouredine
;
Hody, Hubert
;
Dekkers, Harold
;
Delhougne, Romain
;
Ricotti, Lorenzo
;
Banerjee, Kaustuv
;
Vaisman Chasin, Adrian
;
van Setten, Michiel
;
Puliyalil, Harinarayanan
;
Pak, Murat
;
Teugels, Lieve
;
Tsvetanova, Diana
;
Vandersmissen, Kevin
;
Kundu, Shreya
;
Heijlen, Jeroen
;
Batuk, Dmitry
;
Geypen, Jef
;
Goux, Ludovic
;
Kar, Gouri Sankar
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na
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2149
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Acq. date: 2025-12-15
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Metrics
Views
2149
since deposited on 2022-07-09
7
last month
1
last week
Acq. date: 2025-12-15
Citations