Publication:

Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10(3)s retention, > 10(11) cycles endurance and L-g scalability down to 14nm

Date

2021
Proceedings Paper
https://doi.org/10.1109/IEDM19574.2021.9720596
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dc.contributor.authorBelmonte, Attilio
dc.contributor.authorOh, Hyungrock
dc.contributor.authorSubhechha, Subhali
dc.contributor.authorRassoul, Nouredine
dc.contributor.authorHody, Hubert
dc.contributor.authorDekkers, Harold
dc.contributor.authorDelhougne, Romain
dc.contributor.authorRicotti, Lorenzo
dc.contributor.authorBanerjee, Kaustuv
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorvan Setten, Michiel
dc.contributor.authorPuliyalil, Harinarayanan
dc.contributor.authorPak, Murat
dc.contributor.authorTeugels, Lieve
dc.contributor.authorTsvetanova, Diana
dc.contributor.authorVandersmissen, Kevin
dc.contributor.authorKundu, Shreya
dc.contributor.authorHeijlen, Jeroen
dc.contributor.authorBatuk, Dmitry
dc.contributor.authorGeypen, Jef
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorOh, Hyungrock
dc.contributor.imecauthorSubhechha, Subhali
dc.contributor.imecauthorRassoul, Nouredine
dc.contributor.imecauthorHody, Hubert
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorRicotti, Lorenzo
dc.contributor.imecauthorBanerjee, Kaustuv
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorvan Setten, Michiel
dc.contributor.imecauthorPuliyalil, Harinarayanan
dc.contributor.imecauthorPak, Murat
dc.contributor.imecauthorTeugels, Lieve
dc.contributor.imecauthorTsvetanova, Diana
dc.contributor.imecauthorVandersmissen, Kevin
dc.contributor.imecauthorKundu, Shreya
dc.contributor.imecauthorHeijlen, Jeroen
dc.contributor.imecauthorBatuk, Dmitry
dc.contributor.imecauthorGeypen, Jef
dc.contributor.orcidimecOh, Hyungrock::0000-0001-5244-5755
dc.contributor.orcidimecSubhechha, Subhali::0000-0002-1960-5136
dc.contributor.orcidimecRassoul, Nouredine::0000-0001-9489-3396
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecRicotti, Lorenzo::0000-0003-4199-4454
dc.contributor.orcidimecBanerjee, Kaustuv::0000-0001-8003-6211
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecvan Setten, Michiel::0000-0003-0557-5260
dc.contributor.orcidimecPuliyalil, Harinarayanan::0000-0002-9749-5307
dc.contributor.orcidimecTeugels, Lieve::0000-0002-6613-9414
dc.contributor.orcidimecTsvetanova, Diana::0000-0002-5632-5539
dc.contributor.orcidimecKundu, Shreya::0000-0001-8052-7774
dc.contributor.orcidimecBatuk, Dmitry::0000-0002-6384-6690
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2022-08-25T16:17:52Z
dc.date.available2022-07-09T02:27:23Z
dc.date.available2022-08-25T16:17:52Z
dc.date.issued2021
dc.identifier.doi10.1109/IEDM19574.2021.9720596
dc.identifier.eisbn978-1-6654-2572-8
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40079
dc.publisherIEEE
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 11-16, 2021
dc.source.conferencelocationSan Francisco
dc.source.journalna
dc.source.numberofpages4
dc.title

Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10(3)s retention, > 10(11) cycles endurance and L-g scalability down to 14nm

dc.typeProceedings paper
dspace.entity.typePublication
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