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Reliability of ultra-thin gate oxide below 3 nm in the direct tunneling regime

Date

1997
Journal article
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dc.contributor.authorDepas, Michel
dc.contributor.authorDegraeve, Robin
dc.contributor.authorNigam, Tanya
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.date.accessioned2021-09-30T08:11:35Z
dc.date.available2021-09-30T08:11:35Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1851
dc.source.beginpage1602
dc.source.endpage1608
dc.source.issue3B
dc.source.journalJapanese Journal of Applied Physics. Part 1
dc.source.volume36
dc.title

Reliability of ultra-thin gate oxide below 3 nm in the direct tunneling regime

dc.typeJournal article
dspace.entity.typePublication
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