Publication:
An analytical model of MOS admittance for border trap density extraction in high-k dielectrics of III-V MOS devices
Date
Loading...
Files
Journal
Abstract
Description
Metrics
Views
1918 since deposited on 2021-10-23
2last month
1last week
Acq. date: 2025-12-08
Citations
Metrics
Views
1918 since deposited on 2021-10-23
2last month
1last week
Acq. date: 2025-12-08
Citations