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Trap spectroscopy by charge injection and sensing (TSCIS): a quantitative electrical technique for studying defects in dielectric stacks

Date

2008
Proceedings Paper
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dc.contributor.authorDegraeve, Robin
dc.contributor.authorCho, Moon Ju
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorKaczer, Ben
dc.contributor.authorZahid, Mohammed
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-17T06:50:50Z
dc.date.available2021-10-17T06:50:50Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13642
dc.source.beginpage775
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate15/12/2008
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage778
dc.title

Trap spectroscopy by charge injection and sensing (TSCIS): a quantitative electrical technique for studying defects in dielectric stacks

dc.typeProceedings paper
dspace.entity.typePublication
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