Publication:
On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's
Date
| dc.contributor.author | Menozzi, R. | |
| dc.contributor.author | Borgarino, M. | |
| dc.contributor.author | van der Zanden, Koen | |
| dc.contributor.author | Schreurs, Dominique | |
| dc.contributor.imecauthor | Schreurs, Dominique | |
| dc.date.accessioned | 2021-10-14T11:30:30Z | |
| dc.date.available | 2021-10-14T11:30:30Z | |
| dc.date.issued | 1999 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/3668 | |
| dc.source.beginpage | 152 | |
| dc.source.endpage | 154 | |
| dc.source.issue | 4 | |
| dc.source.journal | IEEE Electron Device Letters | |
| dc.source.volume | 20 | |
| dc.title | On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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