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Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

Date

2003
Proceedings Paper
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dc.contributor.authorBender, Hugo
dc.contributor.authorConard, Thierry
dc.contributor.authorRichard, Olivier
dc.contributor.authorBrijs, Bert
dc.contributor.authorPetry, Jasmine
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDefranoux, C.
dc.contributor.authorBoher, P.
dc.contributor.authorRochat, N.
dc.contributor.authorWyon, C.
dc.contributor.authorMack, P.
dc.contributor.authorWolstenholme, J.
dc.contributor.authorVitchev, R.
dc.contributor.authorHoussiau, L.
dc.contributor.authorPireaux, J.J.
dc.contributor.authorBergmaier, A.
dc.contributor.authorDollinger, G.
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.accessioned2021-10-15T04:00:40Z
dc.date.available2021-10-15T04:00:40Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7195
dc.source.beginpage223
dc.source.conferenceAnalytical Techniques for Semiconductor Materials and Processes
dc.source.conferencedate27/04/2003
dc.source.conferencelocationParis France
dc.source.endpage232
dc.title

Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

dc.typeProceedings paper
dspace.entity.typePublication
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