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Articles
Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor
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Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor
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Date
2021
Journal article
https://doi.org/10.1109/LED.2021.3102592
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Min, Jinhong
;
Ronchi, Nicolo
;
O'Sullivan, Barry
;
Banerjee, Kaustuv
;
Van den Bosch, Geert
;
Van Houdt, Jan
;
Shin, Changhwan
;
McMitchell, Sean
Journal
IEEE ELECTRON DEVICE LETTERS
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1725
since deposited on 2021-11-02
1
last month
Acq. date: 2025-12-15
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Metrics
Views
1725
since deposited on 2021-11-02
1
last month
Acq. date: 2025-12-15
Citations