Publication:

Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor

Date

2021
Journal article
https://doi.org/10.1109/LED.2021.3102592
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dc.contributor.authorMin, Jinhong
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorBanerjee, Kaustuv
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorShin, Changhwan
dc.contributor.authorMcMitchell, Sean
dc.contributor.imecauthorMin, Jinhong
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorBanerjee, Kaustuv
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorMcMitchell, Sean
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecBanerjee, Kaustuv::0000-0001-8003-6211
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecVan Houdt, Jan::1234-1234-1234-1235
dc.date.accessioned2022-03-31T12:05:46Z
dc.date.available2021-11-02T15:57:28Z
dc.date.available2022-03-30T07:04:18Z
dc.date.available2022-03-31T12:05:46Z
dc.date.issued2021
dc.identifier.doi10.1109/LED.2021.3102592
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37611
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage1280
dc.source.endpage1283
dc.source.issue9
dc.source.journalIEEE ELECTRON DEVICE LETTERS
dc.source.numberofpages4
dc.source.volume42
dc.subject.disciplineEngineering
dc.subject.keywordsMECHANISM
dc.title

Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor

dc.typeJournal article
dspace.entity.typePublication
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