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Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region
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Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region
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Date
2014
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hu, Jie
;
Lenci, Silvia
;
Stoffels, Steve
;
De Jaeger, Brice
;
Groeseneken, Guido
;
Decoutere, Stefaan
Journal
Physica Status Solidi C
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1913
since deposited on 2021-10-22
Acq. date: 2025-12-11
Citations
Metrics
Views
1913
since deposited on 2021-10-22
Acq. date: 2025-12-11
Citations