Publication:

Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

Date

2014
Journal article
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dc.contributor.authorHu, Jie
dc.contributor.authorLenci, Silvia
dc.contributor.authorStoffels, Steve
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-22T02:06:40Z
dc.date.available2021-10-22T02:06:40Z
dc.date.issued2014
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23962
dc.identifier.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssc.201300472/abstract
dc.source.beginpage862
dc.source.endpage865
dc.source.issue3_4
dc.source.journalPhysica Status Solidi C
dc.source.volume11
dc.title

Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

dc.typeJournal article
dspace.entity.typePublication
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