Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
imec Publications
Articles
Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM
Publication:
Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM
Date
2005
Journal article
Simple item page
Full metadata
Statistics
Loading...
Loading...
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Blasco, X.
;
Nafria, M.
;
Aymerich, X.
;
Petry, Jasmine
;
Vandervorst, Wilfried
Journal
IEEE Trans. Electron Devices
Abstract
Description
Metrics
Views
1955
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations
Metrics
Views
1955
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations