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Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM
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Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM
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Date
2005
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Blasco, X.
;
Nafria, M.
;
Aymerich, X.
;
Petry, Jasmine
;
Vandervorst, Wilfried
Journal
IEEE Trans. Electron Devices
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1957
since deposited on 2021-10-16
1
last month
Acq. date: 2025-12-09
Citations
Metrics
Views
1957
since deposited on 2021-10-16
1
last month
Acq. date: 2025-12-09
Citations