Publication:
Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM
Date
| dc.contributor.author | Blasco, X. | |
| dc.contributor.author | Nafria, M. | |
| dc.contributor.author | Aymerich, X. | |
| dc.contributor.author | Petry, Jasmine | |
| dc.contributor.author | Vandervorst, Wilfried | |
| dc.contributor.imecauthor | Vandervorst, Wilfried | |
| dc.date.accessioned | 2021-10-16T00:46:48Z | |
| dc.date.available | 2021-10-16T00:46:48Z | |
| dc.date.issued | 2005 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/10107 | |
| dc.source.beginpage | 2817 | |
| dc.source.endpage | 2819 | |
| dc.source.issue | 12 | |
| dc.source.journal | IEEE Trans. Electron Devices | |
| dc.source.volume | 52 | |
| dc.title | Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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