Publication:

Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps

Date

2018
Meeting abstract
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dc.contributor.authorPutcha, Vamsi
dc.contributor.authorFranco, Jacopo
dc.contributor.authorVais, Abhitosh
dc.contributor.authorSioncke, Sonja
dc.contributor.authorKaczer, Ben
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-26T01:38:43Z
dc.date.available2021-10-26T01:38:43Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31571
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8353603/
dc.source.beginpage5A.3-1
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate11/03/2018
dc.source.conferencelocationBurlingame, CA USA
dc.source.endpage5A.3-7
dc.title

Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps

dc.typeMeeting abstract
dspace.entity.typePublication
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